Method of making thin film transistor with a self-aligned bottom

Details Method of making thin film transistor with a self-aligned bottom Method of making thin film transistor with a self-aligned bottom

1995-11-17

1996-11-12

Niebling, John

Fishing, trapping, and vermin destroying

437162, 437164, H01L 2184

Patent

active

055739644

ABSTRACT:
A simple method of making a thin film transistor (TFT) on a substrate with an insulating surface layer is disclosed. A layer of dopant source layer is deposited on the insulating layer, followed by defining a gate stack consisting of a gate polysilicon, gate insulator and a protective polysilicon using the dopant source layer as an etch stop. Sidewall spacers are formed in contact with the gate stack. A TFT body polysilicon is deposited and patterned, forming thereby the source and drain regions in a self-aligned manner. By heating, the dopants from the dopant source layer are driven into the source/drain and to part of the off-set regions of the body polysilicon layer while simultaneously also doping the gate polysilicon.

REFERENCES:
patent: 4488348 (1984-12-01), Jolly et al.
patent: 4603468 (1986-08-01), Lam
patent: 4628589 (1986-12-01), Sundaresan
patent: 4987092 (1991-01-01), Kobayashi et al.
patent: 5024959 (1991-06-01), Pfiester
patent: 5158898 (1992-10-01), Hayden et al.

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