Method of fabricating a thin film transistor wherein the gate te

Details Method of fabricating a thin film transistor wherein the gate te Method of fabricating a thin film transistor wherein the gate te

1994-11-14

1996-11-12

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40I, 437101, 437 48, 437 51, H01L 29784

Patent

active

055739580

ABSTRACT:
A method of fabricating a thin film transistor of an inverted stagger structure having a gate terminal, a gate insulator a semiconductor film, a source electrode and a drain electrode formed in that order; a gate terminal and a gate wiring are provided for supplying a scanning signal to the gate electrode; and a source terminal and a source wiring are provided for supplying a data signal to the source electrode, wherein the gate terminal is formed on an upper side of the gate insulating film and electrically connected to the gate wiring through a contact hole formed in the gate insulator.

REFERENCES:
patent: 4803536 (1989-02-01), Tuan
patent: 5034340 (1991-07-01), Tanaka et al.
patent: 5045485 (1991-09-01), Tanaka et al.
patent: 5219771 (1993-06-01), Miyake
patent: 5384271 (1995-01-01), Kwasnick et al.
patent: 5407845 (1995-04-01), Nasu et al.

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