Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock
Patent
1978-08-03
1980-07-08
Larkins, William D.
Electrical transmission or interconnection systems
Personnel safety or limit control features
Interlock
357 14, 357 23, 357 48, 357 51, H01L 2704, H01L 2994
Patent
active
042119413
ABSTRACT:
An integrated-circuit MOS capacitor has a first doped semiconductive region forming one of its plates. This first semiconductor region is electrically isolated from the semiconductor substrate by a second doped semiconductor region, which is of opposite conductivity type to and intervenes between the substrate and the first semiconductive region. The present invention resides in the combination of such an MOS capacitor and a circuit for maintaining the potential in the second semiconductor region of the MOS capacitor structure substantially the same as that appearing on the first semiconductor region for minimizing leakage current flow between them. This circuit also provides the leakage current flowing between the second semiconductor region and the substrate, so the leakage current need not flow from the first semiconductor region.
REFERENCES:
patent: 3654498 (1972-04-01), Chapron
patent: 3879640 (1975-04-01), Schade, Jr.
patent: 4034395 (1977-07-01), Abdelrahman
patent: 4039857 (1977-08-01), Ahmed
patent: 4161742 (1979-07-01), Kane
patent: 4164668 (1979-08-01), Delaporte et al.
Calhoun et al., IBM Tech. Discl. Bulletin, vol. 14, No. 11, Apr. 1972.
"Op-Amp IC's", EEE, Nov. 1969, pp. 16, 19-24.
Keonjian, Microelectronics, (McGraw-Hill, N.Y., 1963), pp. 317-319.
Herrmann Eric P.
Larkins William D.
Limberg Allen LeRoy
Rasmussen Paul J.
RCA Corporation
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