Method of making dielectrically isolated silicon devices

Details Method of making dielectrically isolated silicon devices Method of making dielectrically isolated silicon devices

1983-03-31

1985-01-22

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

357 49, H01L 2176

Patent

active

044943032

ABSTRACT:
Structures useful for dielectrically isolated high voltage devices are produced utilizing a melting technique. In this technique a cavity is produced in a silicon wafer, the surface of the cavity is, for example, oxidized to form a dielectric material, and silicon is deposited onto the dielectric material so that it extends to a region where it is in contact with single crystal silicon, e.g., a portion of the wafer. The entire region of polycrystalline silicon is then melted. Upon termination of the melting energy, the polycrystalline silicon is converted into a thick region of dielectrically isolated single crystal silicon. This thick region is useful for the formation of high voltage devices.

REFERENCES:
patent: 4381201 (1983-04-01), Sakurai
patent: 4404735 (1983-09-01), Sakurai

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