Metal treatment – Compositions – Heat treating
Patent
1980-01-30
1981-04-21
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 23, 357 91, H01L 2120, H01L 2978, H01L 21265
Patent
active
042630576
ABSTRACT:
A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the source region while maintaining the drain region masked and then doping both the source and drain regions.
REFERENCES:
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4089712 (1978-05-01), Joy et al.
patent: 4124933 (1978-11-01), Nicholas
patent: 4131497 (1978-12-01), Feng et al.
Ipri et al., IEEE Trans. Electron Devices, Sep. 1976, pp. 1110-1112.
Benjamin Lawrence P.
Cohen D. S.
Morris Birgit E.
RCA Corporation
Roy Upendra
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