Method of manufacturing short channel MOS devices

Metal treatment – Compositions – Heat treating

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148187, 357 23, 357 91, H01L 2120, H01L 2978, H01L 21265

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active

042630576

ABSTRACT:
A short channel MOS transistor and the method for fabricating same is described wherein the dopant concentrations of the source and drain regions are maintained at different levels of conductivity modifiers. The method described teaches first doping the source region while maintaining the drain region masked and then doping both the source and drain regions.

REFERENCES:
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4089712 (1978-05-01), Joy et al.
patent: 4124933 (1978-11-01), Nicholas
patent: 4131497 (1978-12-01), Feng et al.
Ipri et al., IEEE Trans. Electron Devices, Sep. 1976, pp. 1110-1112.

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