Cylindrical post magnetron sputtering system

Details Cylindrical post magnetron sputtering system Cylindrical post magnetron sputtering system

1981-12-07

1985-06-25

Kaplan, G. L.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

045252645

ABSTRACT:
In a tubular bodied cathode of a sputtering magnetron, at least one permanent magnet is mounted so as to produce magnetic field flux lines that lie in planes oriented transverse to the axis of the cathode body, along a predetermined length thereof. Through appropriate biasing, in a partial pressure ionizable gas atmosphere, a plasma is generated that resembles a closed loop tunnel extending along said predetermined length on the outer surface of the cylindrical cathode, as defined by the magnetic field. Relative rotation between the cathode and the magnetic field provides for even erosion of sputtering material from the surface of the cathode.

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patent: 4374722 (1983-02-01), Zega
J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 76-79, 134-136.

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