Magnetron reactive bias sputtering method and apparatus

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, 204192N, C23C 1500

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active

045252629

ABSTRACT:
The film deposition rate of metallic compounds onto a substrate in a vacuum chamber by reactive sputtering or reactive ion plating is significantly increased by providing a substrate support with spaced apart magnetic poles to create a magnetic field having lines of force which leave the support, extend across a surface of the substrate exposed to a metallic coating source and re-enter the support to enclose the exposed surface in a localized magnetic electron-trapping field. A reactive gas is fed into the chamber, and a bias voltage is applied to the substrate support sufficient to create a dense glow discharge of ionized reactive gas closely adjacent to the substrate surface. The reactive gas ions react with metallic particles deposited on the exposed substrate surface from the coating source to form a film of the desired metallic compound. The localized magnetic plasma trap close to the substrate increases the chemical reaction rate at the substrate and reduces back sputtering, to result in a metallic compound coating having superior physical and chemical characteristics.

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O. Christensen: "Characteristics and Applications of Bias Sputtering," Solid State Technology, vol. 13, No. 12, Dec. 1970, pp. 39-45.
John A. Thornton and Alan S. Penfold: "Cylindrical Magnetron Sputtering", (Chapter II-2, Thin Film Processes, J. L. Vossen & W. Kern, eds., Academic Press, 1978).

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