Thin film deposition apparatus using an RF glow discharge

Details Thin film deposition apparatus using an RF glow discharge Thin film deposition apparatus using an RF glow discharge

1979-10-01

1981-04-21

Kaplan, Morris

Coating apparatus

Gas or vapor deposition

With treating means

204164, 422149, 427 39, C23C 1500

Patent

active

042626315

ABSTRACT:
An RF plasma deposition apparatus for depositing a film of material on substrates positioned in a vertical plane and electrically "floating" within the glow discharge. For deposition of silicon nitride films, the apparatus is adapted to introduce silane gas in a substantially uniform and laminar flow into a coating cavity containing substrates, a ground screen electrode, and a "hot" RF electrode, within which a glow discharge is ignited. Elemental nitrogen may be delivered to the coating cavity after being dissociated in a local, separate RF plasma called an "atomizer" cavity. During coating, elemental nitrogen combines with elemental silicon and deposits silicon nitride upon the substrate surface.

REFERENCES:
patent: 3005762 (1961-10-01), Fenn
patent: 3424661 (1969-01-01), Androshek et al.
patent: 3757733 (1973-09-01), Reinberg
patent: 4066037 (1978-01-01), Jacob

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