Methods and apparatus for improving an RF excited reactive gas p

Details Methods and apparatus for improving an RF excited reactive gas p Methods and apparatus for improving an RF excited reactive gas p

1979-12-26

1982-06-08

Gantz, Delbert E.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 204192E, 42218629, 422906, C23F 102

Patent

active

043338143

ABSTRACT:
The quality of a plasma etching process is improved by applying a DC potential (28') to one of the energizing electrodes (12') in the reaction chamber (11').The DC potential withdraws a small current from the plasma which causes the reaction to produce a uniform, controllable self-bias on the workpiece placed on the opposite (or second) electrode.

REFERENCES:
patent: 3730873 (1973-05-01), Pompei et al.
patent: 3767551 (1973-10-01), Lang, Jr. et al.
patent: 3864239 (1975-02-01), Fletcher et al.
patent: 4222838 (1980-09-01), Bhagat et al.
patent: 4233109 (1980-11-01), Nishizawa
J. S. Logan, Control of RF Sputtered Properties Through Substrate Tuning, IBM J. Res. Develop., Mar. 1970, pp. 172-175.
J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 50-58.
L. I. Maissel et al., Handbook of Thin Film Technology, McGraw-Hill, New York, 1970, pp. 3-9 to 3-11.

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