Process for making integrated-circuit device metallization

Details Process for making integrated-circuit device metallization Process for making integrated-circuit device metallization

1988-12-09

1991-01-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437190, 437192, 437193, 437200, 437246, H01L 21283

Patent

active

049853716

ABSTRACT:
In the manufacture of an integrated-circuit device, periodic interruption of grain growth during chemical vapor deposition of a metal film results in enhanced surface smoothness and ease of patterning. Interruption of grain growth is by deposition of an auxiliary material which, in the interest of high conductivity of the film, may be conductive, may form a conductive compound or alloy, or may be eliminated upon additional metal deposition. When the metal is tungsten, silicon is a preferred grain-growth interrupting material.

REFERENCES:
patent: 3697343 (1972-10-01), Cuomo et al.
patent: 4581627 (1986-04-01), Ueda et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4630357 (1986-12-01), Rogers et al.
patent: 4650696 (1987-03-01), Raby
patent: 4726983 (1988-02-01), Harada et al.
patent: 4742014 (1988-05-01), Hooper et al.
patent: 4751101 (1988-06-01), Joshi
patent: 4796081 (1989-01-01), Cheung et al.
patent: 4812419 (1989-03-01), Lee et al.
patent: 4822749 (1989-04-01), Flanner et al.
patent: 4823182 (1989-04-01), Okumura
patent: 4845050 (1989-07-01), Kim et al.
Moriya et al., IEEE EDM Technical Digest, 1983, pp. 550-553.
Gardner et al., IEEE Trans. Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 174-180.
Shappiro, J. R., Solid State Technology, Oct. 1985, pp. 161-165.
Nicolet, M. A., Thin Solid Films, 52, 1978, pp. 415-445.
IBM Technical Disclosure Bulletin, vol. 30, No. 7, Dec. 1987, pp. 249-260, "High Conductivity . . .".
R. A. Levy et al., "Characterization of LPCVD Aluminum for VLSI Processing," Journal of the Electrochemical Society: Solid State Science and Technology, vol. 131 (1984), pp. 2175-2182.

Affiliated with

Also associated with

Rating

Process for making integrated-circuit device metallization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for making integrated-circuit device metallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making integrated-circuit device metallization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-55112