Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-07-29
1985-06-25
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29577C, 148 15, 357 4, 357 2311, 357 54, 156643, 156657, H01L 2122, H01L 21306
Patent
active
045245088
ABSTRACT:
A method of manufacturing a semiconductor device comprises forming a mask of a predetermined pattern on a first conductive layer (3) deposited over a semiconductor substrate (1) and etching physically first conductive layer so that the side surfaces thereof are substantially perpendicular to a surface of the semiconductor substrate. After removing the mask on the pattern, a first insulating layer (7) is deposited over the whole upper surface of the semiconductor substrate including the first conductive layer. A physical etching is made over the first insulating layer until the surface of the semiconductor substrate is exposed, so that a portion (7a) of the first insulating layer (7) is left in a stepped portion of the side surfaces of the first conductive layer. Then, a second insulating layer (5) is formed over a whole upper surface of the semiconductor substrate including the portion (7a) of the insulating layer and the first conductive layer. Subsequently, a second conductive layer (6) is formed over the whole upper surface thereof.
REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4368085 (1983-01-01), Peel
patent: 4385432 (1983-05-01), Kuo et al.
patent: 4413402 (1983-11-01), Erb
Hearn Brian E.
Hey David A.
Mitsubishi Denki & Kabushiki Kaisha
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