Patent
1987-12-08
1990-03-13
Munson, Gene M.
357 26, 357 55, 73777, 73727, H01L 2348, H01L 2984, H01L 2906, G01L 906
Patent
active
049086936
ABSTRACT:
A semiconductor pressure sensor comprises a sensor chip including an etching stop layer of high concentration impurity ions formed by ion implantation of impurity ions into a substrate of silicon single crystal or by deposition and diffusion and an epitaxial growth layer of silicon single crystal on the etching stop layer, a recess formed in the back of the sensor chip by etching, circuit elements formed on the sensor chip, diffusion leads for connecting the circuit elements, connecting regions, each formed between the etching stop layer and a predetermined position on the surface of the sensor chip, and diffusion regions, each formed between the predetermined position and one of terminals of the circuit elements.
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Munson Gene M.
Sumitomo Electric Industries Ltd.
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