Coherent light generators – Particular active media – Semiconductor
Patent
1994-12-16
1996-11-19
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 43, H01S 319
Patent
active
055770614
ABSTRACT:
A mid-IR laser is provided having novel AlAs/Al.sub.x Ga.sub.1-x Sb or InAs/Al.sub.x Ga.sub.1-x Sb superlattice cladding regions. The arsenide layers of the n-type cladding region are doped n-type, utilizing silicon, and may be used with conventional active region materials, such as InAs.sub.z Sb.sub.1-z and In.sub.w Ga.sub.1-w As.sub.y Sb.sub.1-y. The novel cladding regions can be deposited without the use of Group VI elements, such as Te, which are not preferred source materials for MBE growth. Furthermore, the need for quaternary layers, such as Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, used in the prior art devices, is eliminated; consequently, the need for precise control of two Group V fluxes (As and Sb) is eliminated.
REFERENCES:
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patent: 5007063 (1991-04-01), Kahen
patent: 5251225 (1993-10-01), Eglash et al.
Shen et al,"Remote n-type modulation doping of InAs quantum wells by `deep acceptors`in ALSb",Journal of Applied Physics. 73(12),June 15 1993,pp. 8313-8318.
Choi, H. K., Eglash, S., "High-Efficiency High-Power GaLnAsSb--ALGaAsSb Double-Heterostructure Lasers Emitting a t 2.3 microns", IEEE Journal of Quantum Electronics, vol 27, No. 6, Jun. 1991 pp. 1555-1559.
"High-power multiple-quantum-well GalnAsSb/A1GaAsSb diode lasers emitting at 2.1 .mu.m with low threshold current density", H. K. Choi et al, Applied Physics Letters, vol. 61(10), pp. 1154-1156 (7 Sep. 1992).
"InAsSb/A1AsSb double-heterostructure diode lasers emitting at 4 .mu.m", S. J. Eglash et al, Applied Physics Letters, vol. 64(7), pp. 883-835 (14 Feb. 1994).
Chow David H.
Hasenberg Thomas C.
Bovernick Rodney B.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Song Yisun
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