Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1990-05-29

1991-09-10

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

050480359

ABSTRACT:
A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second conductivity type formed on the InGaAlP layer and having a larger band gap than that of the InGaAlP layer, and an electrode formed on a part of the GaAlAs layer. The light emitting diode emits light from a surface at the electrode side except for the electrode. A current from the electrode is widely spread by the GaAlAs layer to widely spread a light emitting region.

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Appl. Phys. Lett. 47(10); Nov. 15, 1985; Masao Ikeda et al., "Room-Temperature Continuous-Wave Operation of an AlGalnP Double Heterostructure Laser Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition", pp. 1027-1028.

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