Semiconductor laser

Details Semiconductor laser Semiconductor laser

1995-11-21

1997-04-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

056174373

ABSTRACT:
A semiconductor laser comprises an active layer, optical waveguide layers formed on opposite sides of the active layer, and cladding layers. The active layer is constituted of an InGaAsP type of compound semiconductor. Each of the optical waveguide layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements is at least 2%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%. Each of the cladding layers is constituted of an InGaAsP type of quarternary compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%, or an InGaAlAsP type of five-element compound semiconductor, in which the content of As in the Group-V elements falls within the range of 2% to 10%.

REFERENCES:
patent: 5436924 (1995-07-01), Kamei et al.
patent: 5479427 (1995-12-01), Yoshida et al.
patent: 5509026 (1996-04-01), Sasaki et al.
Journal of Quantum Electronics, vol. 27 No. 6 Jun. 1991.
IEEE Photonics Technology Letters, vol. 6 No. 1 Jan. 1994.
IEEE Journal of Quantum Electronics, vol. 30 No. 2 Feb. 1994.
IEEE Journal of Quantum Electronics, vol. QE-20, No. 10 Oct. 1984.
Jpn. J Appl. Phys. vol. 31 (1992) pp. L1686-L 1688 Part 2, No. 12A 1 Dec. 1992.
IEEE Photonics Technology Letters, vol. 6, No. 1 Jan. 1994.

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