Semiconductor integrated circuit device with high reliability wi

Details Semiconductor integrated circuit device with high reliability wi Semiconductor integrated circuit device with high reliability wi

1987-10-13

1990-03-13

Gonzalez, Frank

357 41, H01L 2348

Patent

active

049086901

ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate and a wiring layer formed on the substrate. An output buffer transistor is provided with its gate formed along the direction of the wiring. The resulting device has improved area efficiency and is less susceptible to wiring element slide without requiring slits to be formed in the wiring structure--and thus also has lower current density.

REFERENCES:
patent: 4060828 (1977-11-01), Satonaka
patent: 4740825 (1988-04-01), Saeki
"Stress Analysis of Passivation Film Crack for Plastic Molded LSI Caused by Thermal Stress", S. Okikawa et al, Musashi Works, Hitachi Ltd., 1450, Josuihon-cho, Kodaira-shi, Tokyo, 187 Japan, ISFTA (1983), pp. 275-280.

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