Misfet semiconductor device having different vertical levels

Details Misfet semiconductor device having different vertical levels Misfet semiconductor device having different vertical levels

1996-07-15

2000-07-11

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257296, 257903, 257906, 257907, 257908, H01L 2348, H01L 2352, H01L 2940, H01L 27108

Patent

active

060877278

ABSTRACT:
An object is to provide a structure of a semiconductor device which allows higher degree of integration both in vertical and horizontal directions, and to provide manufacturing method therefor. The semiconductor device includes source.drain electrodes connected to n.sup.- and n.sup.+ source.drain regions of an MISFET and has a function as a part of a bit line, and a gate electrode connected to a first interconnection as a word line. Electrodes are insulated from each other by a sidewall insulating film, silicon oxide film or a silicon nitride film provided inbetween. Since the word line and the bit line do not cross in the same plane, the difference in level in the vertical direction can be reduced.

REFERENCES:
patent: 5596212 (1997-01-01), Kuriyama

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