Patent
1989-10-26
1992-01-14
Hille, Rolf
357 52, 357 53, 357 71, H01L 2948, H01L 2956, H01L 2964
Patent
active
050815105
ABSTRACT:
A semiconductor device such as a Schottky-barrier rectifier diode is disclosed which has a barrier electrode formed on a semiconductor substrate of gallium arsenide or the like. Formed around the barrier electrode is an annular resistive layer, typically of titanium oxide, creating a Schottky barrier at its interface with the semiconductor substrate. The resistive layer has a sheet resistance of more than 10 kilohms per square. In order to prevent preliminary breakdowns from taking place at the peripheral part of the resistive layer before final breakdown of the device, the sheet resistance of the resistive layer is made higher as it extends away from the barrier electrode. For the ease of manufacture, the resistive layer can be divided into two or more annular regions of distinctly different sheet resistances.
REFERENCES:
patent: 3652905 (1972-03-01), Page
patent: 3907617 (1975-09-01), Zwernemann
patent: 4062033 (1977-12-01), Suzuki
patent: 4157563 (1979-06-01), Bosselaar
patent: 4408216 (1983-10-01), Gould
patent: 4607270 (1986-08-01), Iesaka
patent: 4862229 (1989-08-01), Mundy et al.
patent: 4899199 (1990-02-01), Gould
patent: 4980749 (1990-12-01), Ohtsuka et al.
Goto Hirokazu
Ohtsuka Koji
Hille Rolf
Sanken Electric Co. Ltd.
Tran Minhloan
LandOfFree
High-voltage semiconductor device having a rectifying barrier, a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-voltage semiconductor device having a rectifying barrier, a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage semiconductor device having a rectifying barrier, a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-544675