Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-12-11
2000-07-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257240, 257243, H01L 27148, H01L 29768
Patent
active
060876859
ABSTRACT:
A solid-state imaging device includes a plurality of sensor portions, and a vertical shift register corresponding to each of a series of sensor portions. A transfer electrode of the vertical shift register is formed of a first electrode and a second electrode which are repeatedly provided corresponding to the respective series of sensor portions and also formed continuously between the sensor portions adjacent to each other in the vertical direction. A signal charge is read out from each of the sensor portions through a portion below a read gate portion of the first electrode between sensor portions located in the vertical direction.
REFERENCES:
patent: 5280186 (1994-01-01), Lu
patent: 5351081 (1994-09-01), Matsui et al.
patent: 5723884 (1998-03-01), Kim
Ngo Ngan V.
Sony Corporation
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