Reverse conducting gate turn-off thyristor

Details Reverse conducting gate turn-off thyristor Reverse conducting gate turn-off thyristor

1989-04-27

1991-09-10

Hille, Rolf

357 39, H01L 2974, H01L 29747

Patent

active

050478249

ABSTRACT:
A reverse conducting gate turn-off thyristor has a separating layer (26) in isolating zone (Z) for electrically separating into thyristor and diode portion (X, Z) a p type base layer (22) formed on an n type base layer (21). A gate electrode (29) is formed both on the p type base layer (22) and the separating layer. A portion of the gate electrode (29) on said separating layer serves as a gate collecting electrode (29a). Thus, area for the isolating zone (Z) and the gate collecting electrode (29a) become common, so that the efficiency of utilization of the wafer surface can be increased.

REFERENCES:
patent: 4791470 (1988-12-01), Shinohe et al.

Affiliated with

Also associated with

Rating

Reverse conducting gate turn-off thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reverse conducting gate turn-off thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reverse conducting gate turn-off thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-543923