Semiconductor device having improved test electrodes

Details Semiconductor device having improved test electrodes Semiconductor device having improved test electrodes

1996-12-17

1998-03-31

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257735, 257738, 257777, 257723, 257686, 257693, H01L 2352, H01L 2348, H05K 334

Patent

active

057341990

ABSTRACT:
The main surface of a first semiconductor chip having a first functional element is formed with first testing electrodes for testing the electrical characteristics of the first functional element and first connecting electrodes electrically connected to the first functional element. The main surface of a second semiconductor chip having a second functional element is formed with second testing electrodes for testing the electrical characteristics of the second functional element and second connecting electrodes electrically connected to the second functional element. The first semiconductor chip and the second semiconductor chip are integrated by using an insulating resin, with first bumps formed on the first connecting electrodes being bonded to third bumps formed on the second connecting electrodes.

REFERENCES:
patent: 4693770 (1987-09-01), Hatada
patent: 5289631 (1994-03-01), Koopman et al.
patent: 5523628 (1996-06-01), Williams et al.
patent: 5550408 (1996-08-01), Kunitomo et al.
patent: 5591941 (1997-01-01), Acocella et al.
patent: 5591959 (1997-01-01), Cigna et al.
patent: 5598036 (1997-01-01), Ho
patent: 5600180 (1997-02-01), Kusaka et al.
patent: 5621225 (1997-04-01), Shieh et al.
patent: 5625230 (1997-04-01), Park et al.
IBM Technical Disclosur Bulletin "Multilevel Alloy Joining System for Semiconductor Dies" vol. 21. No. 2 Dec. 1978 pp. 2743-2746.

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