Transferred electron III-V semiconductor photocathode

Details Transferred electron III-V semiconductor photocathode Transferred electron III-V semiconductor photocathode

1990-03-15

1991-09-10

Hille, Rolf

357 4, 357 16, 357 3, 357 32, H01L 2714, H01L 3100, H01L 29161, H01L 4500

Patent

active

050478214

ABSTRACT:
An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources.

REFERENCES:
patent: 3958143 (1976-05-01), Bell
patent: 4614961 (1986-09-01), Khan et al.
patent: 4751423 (1988-06-01), Munter et al.
patent: 4903090 (1990-02-01), Yokoyama
"Field Assisted Semiconductor Photoemitters for the 1-2-.mu.m Range", Escher et al, IEEE Transactions on Electron Devices, vol. ED-27, No. 7, Jul. 1980, pp. 1244-1250.

Affiliated with

Also associated with

Rating

Transferred electron III-V semiconductor photocathode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transferred electron III-V semiconductor photocathode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transferred electron III-V semiconductor photocathode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-543859