Patent
1990-05-11
1991-09-10
Carroll, J.
357 234, 357 239, 357 2311, 357 20, H01L 2910, H01L 2968, H01L 2906
Patent
active
050478206
ABSTRACT:
An improved process to fabricate a high breakdown voltage MOSFET is disclosed. The process self-aligns the channel to the source and drain and semi self-aligns the gate electrode to the channel. The MOSFET also includes a boron field implant to extend the source and drain. A high voltage gate oxide can be provided.
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Carroll J.
Micrel Inc.
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