Thyristor having an anode transverse field emitter

Details Thyristor having an anode transverse field emitter Thyristor having an anode transverse field emitter

1978-10-11

1980-09-16

Clawson, Jr., Joseph E.

357 20, 357 86, H01L 2974

Patent

active

042233321

ABSTRACT:
A thyristor exhibiting improved maximum current rise rates as a result of the relocation of the ignition front from the edge of the cathode emitter zone to inner cathode emitter areas. This relocation is effected by providing a relatively light doping of the anode zone beneath the thyristor gate and cathode emitter edge, and a relatively higher anode zone doping opposite and outside of the cathode edge, while not applying an anode electrode metal coating to the lightly doped area of the anode zone. The thyristor utilizes cathode emitter short circuit rings arranged such that the ignition front which occurs at thyristor triggering bypasses the short circuit ring immediately adjacent the cathode emitter edge, thereby increasing the thyristor voltage rise velocity, dU/dt.

REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3599061 (1971-08-01), Kokosa
patent: 3964091 (1976-06-01), Berndes et al.
patent: 4053922 (1977-10-01), Ferro
patent: 4089024 (1978-05-01), Tanaka
patent: 4150390 (1979-04-01), Jacklin
A. Munoz-Yague et al., "Optimum Design of Thyristor Gate-Emitter Geometry, "IEEE Trans. on Elec. Dev., vol. EO-23#8, Aug. 1976, pp. 917-924.

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