Methods of forming semiconductor-on-insulator devices including

Details Methods of forming semiconductor-on-insulator devices including Methods of forming semiconductor-on-insulator devices including

1999-04-27

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438426, 438938, 438227, H01L 2176

Patent

active

060872446

ABSTRACT:
Semiconductor-on-insulator (SOI) devices are fabricated by forming first and second semiconductor layers of opposite conductivity types, at a first face of a substrate. An insulating layer is formed on the first and second semiconductor layers. A trench is formed through the insulating layer extending between the first and second semiconductor layers and extending into the substrate. A portion of the substrate is removed from a second face which is opposite the first face, to define respective first and second active regions on the respective first and second semiconductor layers.

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