Method of forming rough polysilicon surfaces suitable for capaci

Details Method of forming rough polysilicon surfaces suitable for capaci Method of forming rough polysilicon surfaces suitable for capaci

1999-02-22

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438665, H01L 2120

Patent

active

060872403

ABSTRACT:
A semiconductor processing method of providing a polysilicon film having induced outer surface roughness includes, a) providing a polysilicon layer over a substrate, the polysilicon layer having an outer surface of a first degree of roughness; b) providing a layer of a refractory metal silicide over the outer surface of the polysilicon layer, the refractory metal silicide preferably being WSi.sub.x where "x" is initially from 1.0 to 2.5, the WSi.sub.x layer and the polysilicon layer outer surface defining a first interface therebetween; c) annealing the substrate at a temperature and for a time period which are effective to transform the WSi.sub.x into a tetragonal crystalline structure and to transform the first interface into a different second interface, the WSi.sub.x layer not being in a tetragonal crystalline state prior to the anneal, the WSi.sub.x at the second interface having an increased value of "x" from the initial value of "x"; and d) etching the WSi.sub.x layer from the polysilicon layer at least to the second interface to leave an outer polysilicon surface having a second degree of roughness, the second degree of roughness being greater than the first degree of roughness. A capacitor having a conductive plate comprising a polysilicon film produced by the process is also disclosed.

REFERENCES:
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patent: 5182232 (1993-01-01), Chhabra et al.
patent: 5223081 (1993-06-01), Doan
patent: 5543347 (1996-08-01), Kawano et al.
patent: 5766968 (1998-06-01), Armacost et al.
patent: 5877063 (1999-03-01), Gilchrist

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