Power MOSFET having a current sensing element of high accuracy

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 2314, 357 41, 357 46, H01L 2978

Patent

active

049086820

ABSTRACT:
Herein disclosed is a vertical power MOSFET having a current sensing MOSFET, in which the base region of the current sensing MOSFET is electrically connected with the base region of the vertical MOSFET whereas the current leading-out electrode of the current sensing MOSFET is connected with only the source region of the current sensing MOSFET.

REFERENCES:
patent: 4680604 (1987-07-01), Nakagawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power MOSFET having a current sensing element of high accuracy does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power MOSFET having a current sensing element of high accuracy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power MOSFET having a current sensing element of high accuracy will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-54169

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.