Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-02-01
1997-04-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257204, 257347, 257350, 257369, 257627, H01L 29786
Patent
active
056169353
ABSTRACT:
The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20%, to thereby approximately equalize the threshold voltage absolute values of those TFTs.
REFERENCES:
patent: 4942441 (1990-07-01), Konishi et al.
patent: 5148244 (1992-09-01), Iwasaki
patent: 5153702 (1992-10-01), Aoyama et al.
patent: 5243202 (1993-09-01), Mori et al.
patent: 5250931 (1993-10-01), Misawa et al.
Koyama Jun
Takemura Yasuhiko
Butts Karlton C.
Crane Sara W.
Ferguson Jr. Gerald J.
Hardy David B.
Semiconductor Energy Laboratory Co,. Ltd.
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