Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-03-22
1997-04-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257330, 257347, 257333, 257903, 257377, 257412, 257774, H01L 2968, H01L 21265
Patent
active
056169345
ABSTRACT:
The invention is directed to a thin film transistor (TFT) fabricated by using a planarized poly plug as the bottom gate for use in any integrated circuit and in particular an static random access memory (SRAM). The TFT is used in an SRAM device to form a planarized SRAM cell comprising: a pulldown transistor having a control gate and source/drain terminals; a planarized insulating layer having grooves therein, each groove providing access to an underlying conductive material; a planarized conductive plug residing inside each groove, whereby a first conductive plug forms a thin film transistor gate connecting to an to an adjacent inverter and a second conductive plug provides connection to the gate of the pulldown device; a gate dielectric overlying the first planarized conductive plug; and a patterned semiconductive layer doped such that a channel region aligns to each thin film transistor gate and a source/drain region aligns to each side of the channel region is formed.
REFERENCES:
patent: 4740483 (1988-04-01), Tobin
patent: 5112765 (1992-05-01), Cederbaum et al.
patent: 5266507 (1993-11-01), Wu
patent: 5334862 (1994-08-01), Manning et al.
patent: 5336917 (1994-08-01), Kohyama
Dennison Charles H.
Manning Monte
Crane Sara W.
Micro)n Technology, Inc.
Williams Alexander Oscar
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