Method for forming a silicide film used in a semiconductor chip

Details Method for forming a silicide film used in a semiconductor chip Method for forming a silicide film used in a semiconductor chip

1990-04-02

1992-01-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437 41, 148DIG19, H01L 21283

Patent

active

050810669

ABSTRACT:
A method for forming a silicide film on a conducting layer in a semiconductor device is disclosed. The method comprises providing a semiconductor device having a first conducting layer of a doped silicon. A second conducting layer of an undoped silicon is deposited on the first conducting layer. A metal layer on the second conducting layer and the metal layer is heated to cause it to react with the second conducting layer formed with undoped silicon, thereby forming a uniform silicide film in the second conducting layer deposited on the first conducting layer of the semiconductor device.

REFERENCES:
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patent: 4625391 (1986-12-01), Sasaki
patent: 4737474 (1988-04-01), Price et al.
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4966868 (1990-10-01), Murali et al.
patent: 4992391 (1991-02-01), Wang
patent: 5001082 (1991-03-01), Goodwin-Johansson

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