Method of forming electrical contact between interconnection lay

Details Method of forming electrical contact between interconnection lay Method of forming electrical contact between interconnection lay

1990-06-04

1992-01-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437195, 437189, 357 68, 357 71, H01L 2144

Patent

active

050810642

ABSTRACT:
A method of forming an electrical contact between interconnection layers located at different layer levels includes the steps of forming a contact hole in an interlayer insulating film, and forming a metallic intermediate layer on an exposed surface portion of a first conductive interconnection layer and the interlayer insulating film. Then, a portion of said metallic intermediate layer exposed through said contact hole and an oxide film formed on said surface portion of the first conductive interconnection layer are eliminated by an etching process. This process is carried out in a vacuum. After that, in the vacuum, a second conductive interconnection layer is formed in said contact hole and formed on said interlayer insulating film so that an electrical contact between said first and second conductive interconnection layers are formed.

REFERENCES:
patent: 4107726 (1978-08-01), Schilling
patent: 4507852 (1985-04-01), Karulkar
patent: 4937652 (1990-06-01), Okumura et al.
patent: 4952521 (1990-08-01), Goto
patent: 4962414 (1990-10-01), Liou et al.
patent: 4983543 (1991-01-01), Sato et al.
patent: 4998157 (1991-03-01), Yokoyama et al.
IBM Technical Disclosure Bulletin, vol. 24, No. 9, Feb. 1982, New York, US, p. 4740, M. Shatzkes & A. Sugerman: "Via Hole Contact Resistance Yield Improvement" the whole document.

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