Process for coding and code marking read-only memory

Details Process for coding and code marking read-only memory Process for coding and code marking read-only memory

1995-06-28

1996-11-19

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 52, 437924, H01L 21265

Patent

active

055762360

ABSTRACT:
A process for coding and code marking a read-only memory device makes use of a buffer layer, such as silicon nitrides (Si.sub.3 N.sub.4) or silicon oxynitrides (SiN.sub.x O.sub.y), to form a code mark therein. Owing to the etching selectivity between the buffer layer and an underlying layer, for example, silicon oxides, the programmed region not covered by the word lines will not suffer from etching damage while forming the code mark. Therefore, the coding and code marking process can employ the same mask layer, but without the need for two different photomasking procedures to implement code programming and identification code marking.

REFERENCES:
patent: 4230504 (1980-10-01), Kuo
patent: 5051374 (1991-09-01), Kagawa et al.
patent: 5393233 (1995-02-01), Hong et al.

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