Fishing – trapping – and vermin destroying
Patent
1993-04-28
1996-11-19
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437174, 437194, 437 41, H01L 2184
Patent
active
055762255
ABSTRACT:
An improved method of forming insulated gate field effect transistors is described. In accordance with the method, gate electrodes are formed from metal such as aluminum together with wirings electrically connecting the gate electrodes. The gate electrodes are anodic oxidized by dipping them as an anode in an electrolyte to form an oxide of the metal covering them. Since the connecting wirings are covered with a suitable organic film before the anodizing, no aluminum oxide is formed thereon so that it is easy to remove the connecting wiring by usual etching.
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Adachi Hiroki
Koyama Itaru
Uochi Hideki
Yamazaki Shunpei
Zhang Hongyong
Booth Richard A.
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski Mary
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