Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

1994-12-19

1996-11-19

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 3, 437106, 437131, H01L 27144, H01L 2120

Patent

active

055762212

ABSTRACT:
To selectively grow a P type silicon layer and a Si/Ge.sub.x Si.sub.1-x superlattice layer under low temperature conditions in the area encircled with a groove, at least the side walls of which consist of silicon oxide film, which is formed in the silicon substrate. Thereby, the leak at the side of the superlattice layer can be reduced. Furthermore, by burying a metal film in the groove, the loss of light at the side of the superlattice layer can be suppressed to the minimum. Thus a light receiver having silicon/germanium silicon-mixed-crystal layer is stably formed in a silicon semiconductor substrate and optical absorption efficiency can be improved.

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patent: 4847210 (1989-07-01), Hwang et al.
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patent: 5266813 (1993-11-01), Comfort et al.
patent: 5399511 (1995-03-01), Taka et al.
Pearsall, T. P. et al., "Avalanche Gain in Ge.sub.x Si.sub.1-x /Si Infrared Waveguide Detectors", 1986 IEEE, pp. 330-332.

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