Phase shift mask and phase shift mask blank

Details Phase shift mask and phase shift mask blank Phase shift mask and phase shift mask blank

1998-09-15

2000-07-11

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060870478

ABSTRACT:
In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first optical light beam, the semi-transparent film includes silicon and nickel, and at least one selected from the group consisting of nitrogen, oxygen and hydrogen, and the relationship between the silicon and the nickel is specified by a formula in which a rate of [atom % of the nickel in the film] for [atom % of the nickel in the film+atom % of the silicon in the film] falls within the range between 0.15 and 0.5.

REFERENCES:
patent: 4460831 (1984-07-01), Oettinger et al.
patent: 5631109 (1997-05-01), Ito
patent: 5897977 (1999-04-01), Carcia et al.

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