Method for producing compound semiconductor single crystal subst

Details Method for producing compound semiconductor single crystal subst Method for producing compound semiconductor single crystal subst

1990-07-03

1991-09-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437247, 437939, 437946, 148DIG65, H01L 21324

Patent

active

050473700

ABSTRACT:
A method for producing compound semiconductor single crystal substrates which comprises the following steps, wafers of a compound semiconductor single crystal grown by the LEC method are installed in an evacuated and sealed quartz ampoule and subjected to a first annealing step at the predetermined temperature for the predetermined period, then the wafers are gradually cooled down to room temperature at the predetermined cooling speed, the cooled wafers are then subjected to etching, the etched wafers are subjected to a second annealing step at the predetermined temperature for the predetermined period in a non-oxidizing atmosphere, and finally, the wafers are gradually cooled down to room temperature.

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patent: 4636280 (1987-01-01), Nakai et al.
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patent: 4752592 (1988-06-01), Tamura et al.
patent: 4851358 (1989-07-01), Huber
patent: 4889493 (1989-12-01), Otsuki et al.

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