Method of diffusing silicon into compound semiconductors and com

Details Method of diffusing silicon into compound semiconductors and com Method of diffusing silicon into compound semiconductors and com

1988-10-28

1991-09-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437987, 437141, 148DIG34, 372 45, H01L 21225

Patent

active

050473662

ABSTRACT:
A method of diffusing Si into compound semiconductor from a Si film provided on a surface region of the compound semiconductor, wherein the diffusion is conducted with providing a diffusion stopper layer at a position of predetermined depth from the surface of the compound semiconductor, which stopper layer has a lower diffusion speed than that of the compound semiconductor.
A compound semiconductor device includes a compound semiconductor substrate, a diffusion stopper layer provided on the semiconductor substrate, a compound semiconductor layer provided on the diffusion stopper layer, a Si film provided on the semiconductor layer, and Si diffusion regions into which Si is diffused from the Si film so as to reach the interface between the diffusion stopper layer and the semiconductor substrate.

REFERENCES:
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patent: 4731789 (1988-03-01), Thornton
patent: 4830983 (1989-05-01), Thornton
patent: 4847217 (1989-07-01), Omura et al.
Omura Wu et al, "Silicon Diffusion into Al.sub.x Ga.sub.1-x As (X=0-0.4) from a Sputtered Silicon Film", Applied Physics Letters, vol. 50(5), Feb. 2, 1987, pp. 265-266.
Omura Vawter et al, "Selective Double Diffusion of Zn and Si into GaAs Using Sputtered Si Masks", Japanese Journal of Applied Physics, Aug. 20-22, 1986, pp. 141-144.
Greiner et al, "Diffusion of Silicon . . . Experiment and Model", Applied Physics Letters, vol. 44(8), Apr. 15, 1984, pp. 750-752.
Omura et al, "Silicon Diffusion . . . Sputtered Silicon Film", Applied Physics Letters, vol. 50(5), Feb. 2, 1987, pp. 265-266.

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