Method of implanting into the sidewall of a trench by rotating t

Details Method of implanting into the sidewall of a trench by rotating t Method of implanting into the sidewall of a trench by rotating t

1989-04-26

1991-09-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 63, 437932, H01L 21266

Patent

active

050473590

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device. In order to controllably introduce impurities into the side wall of a trench 2a by ion implantation impurity ions are directed at a predetermined angle into the side wall of the trench 2a provided in a wafer 2a and, for implantation thereof, at the same time, the wafer 2 is rotated around an ion implantation axis at a rotational speed related to the ion implantation current.

REFERENCES:
patent: 3388009 (1968-06-01), King
patent: 4404233 (1983-09-01), Ikeda
patent: 4532696 (1985-08-01), Iuai
Chandhi, S. K., VLSI Fabrication Principles, 1983, pp. 304-305.
Translation of Kakai #105324.

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