Semiconductor diode and method for making it

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 84, 437228, 437234, 437904, H01L 2104

Patent

active

050473557

ABSTRACT:
A semiconductor diode has three adjacent regions. The doped regions are doped in the same manner and are separated from one another by a third, intrinsic region. The intrinsic region is dimensioned such that upon application of a specific external voltage at the operating temperature of the diode, it is possible for charge carriers to tunnel from one doped region to the other doped region through the intrinsic region. The semiconductor diode has a planar structure on a semiconductor substrate. A semconductor diode of this kind is suitable for use as a protective diode for other components, particularly when they are mounted on substrates consisting fo connecting semiconductors.

REFERENCES:
patent: 2790037 (1957-04-01), Shockley
patent: 3184350 (1965-05-01), Marinace
patent: 3270231 (1966-08-01), Loebner
patent: 3442011 (1969-05-01), Strieter
patent: 3445686 (1969-05-01), Rutz
patent: 3532562 (1970-10-01), Clawson
patent: 3652324 (1972-03-01), Chu et al.
patent: 3749614 (1973-07-01), Boleky, III et al.
patent: 3769694 (1973-11-01), Collins et al.
patent: 4173763 (1979-11-01), Chang et al.
patent: 4198644 (1980-04-01), Esaki
patent: 4252580 (1981-02-01), Messick
patent: 4261004 (1981-04-01), Masuhara et al.
patent: 4263057 (1981-04-01), Ipri
patent: 4268844 (1981-05-01), Meiners
patent: 4277883 (1981-07-01), Kaplan
patent: 4286275 (1981-08-01), Heiblum
patent: 4339285 (1982-07-01), Pankove
patent: 4371884 (1983-02-01), Esaki et al.
patent: 4396931 (1983-08-01), Dumke et al.
patent: 4468851 (1984-09-01), Wieder et al.
patent: 4494016 (1985-01-01), Ransom et al.
patent: 4504840 (1985-03-01), Chappell et al.
patent: 4527213 (1985-07-01), Ariizumi
patent: 4546366 (1985-10-01), Buchanan
patent: 4556896 (1985-12-01), Ohata
patent: 4581621 (1986-04-01), Reed
patent: 4583105 (1986-04-01), Rosenberg
patent: 4593301 (1986-06-01), Inata et al.
Lemay, "Manufacture of Semiconductor Devices", IBM TD13, vol. 5, No. 2, Jul. 1962, p. 17.
Ghandhi, S. K., VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley & Sons, Inc. (1983), p. 300, .pi.2, p. 301, .pi.2.
IEEE Journal of Solid-State Circuits, vol. SC-17, No. 4, Aug. 1982, pp. 648 to 653, Nambu et al.
"Semiconductor and Electronic Devices 2nd Edition", by A. Bar-Lev, pp. 136 to 145.
"pn-Ubergange", by Ihre Physik, New York/1979, 9 pages.
"Punch-Through Gate Protection of M.O.S. Devices", by Miller et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor diode and method for making it does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor diode and method for making it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diode and method for making it will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-539675

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.