Low resistance Schottky diode on polysilicon/metal-silicide

Details Low resistance Schottky diode on polysilicon/metal-silicide Low resistance Schottky diode on polysilicon/metal-silicide

1984-01-12

1990-03-13

Clawson, Jr., Joseph E.

357 59, 357 67, H01L 2948

Patent

active

049086790

ABSTRACT:
A Schottky diode is fabricated according to the following steps: forming a layer of metal-silicide on an underlying dielectric layer, forming a polysilicon layer on the upper surface of the metal-silicide layer, forming a second dielectric layer on the upper surface of the polysilicon layer and patterning the second dielectric layer to create a contact window through the second dielectric layer to an exposed surface region of the polysilicon layer, and forming a metal contact to the exposed surface region.

REFERENCES:
patent: 4070654 (1978-01-01), Tachi
patent: 4128670 (1978-12-01), Gaensslen
patent: 4163246 (1979-07-01), Aomura et al.
patent: 4220961 (1980-09-01), Werner
patent: 4227944 (1980-10-01), Brown et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4392150 (1983-07-01), Courreges
R. Shah et al., "P-N Jcn. & Schot. B. D. Fab. in Laser Recrt. Polyon SiO.sub.2," IEEE Electron Dev. Lett., vol. EDL-2, No. 7, Jul. 1981, pp. 159-161.
A. Tasch et al., "Sil-On-Ins MOSFETS . . . SiO.sub.2 " Electronics Letters, Jul. 5, 1979, vol. 15, No. 14, pp. 435-437.

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