FET with a super lattice channel

Details FET with a super lattice channel FET with a super lattice channel

1987-09-30

1990-03-13

Edlow, Martin H.

357 237, H01L 2712

Patent

active

049086782

ABSTRACT:
An improved FET is disclosed. The transistor is characterized in that its channel is constituted in the form of a super lattice. The super lattice structure provides a number of square well potential areas through which carriers can pass with little interaction with the gate insulating film.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle
patent: 4642144 (1987-02-01), Tiedje

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