Silicon wafer and method for producing the same

Details Silicon wafer and method for producing the same Silicon wafer and method for producing the same

1998-12-21

2000-07-11

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 35, 117902, C30B 1536

Patent

active

060866705

ABSTRACT:
An n-type wafer is provided having a <111> crystal axis in which the resistivity distribution in the surface of the wafer is uniform. The wafer is suitable for use in, e.g., a zener diode. A method is provided for growing a single crystal of n-type silicon doped with a group V element such as phosphorus using the Czochralski method or the floating zone melting (FZ) method wherein the center axis of the silicon single crystal is tilted by a tilt angle of 1-6 degrees from the <111> crystal axis. The silicon single crystal is sliced obliquely at the angle corresponding to the tilt angle to yield an n-type wafer having a <111> crystal axis.

REFERENCES:
patent: 3655345 (1972-04-01), Longo et al.
patent: 5408951 (1995-04-01), Tamida
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Silicon Processing, Lattice Press, Sunset Beach, Calif., USA, pp. 8-9,12-13, 21,23-29, 1986.

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