Stabilization of the interface between aluminum and titanium nit

Details Stabilization of the interface between aluminum and titanium nit Stabilization of the interface between aluminum and titanium nit

1995-10-16

1998-05-05

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437194, 437197, H01L 2128

Patent

active

057473617

ABSTRACT:
A semiconductor device comprises at least one metal interconnect layer, a titanium-based barrier layer in contact with the metal interconnect layer. The metal interconnect layer contains titanium in an amount up to the limit of solid solubility at the peritectic temperature. The arrangement is effective to reduce hillock, spike, and notch formation in the semiconductor device.

REFERENCES:
patent: 4820611 (1989-04-01), Arnold, III et al.

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