Method for producing a transistor using anodic oxidation

Details Method for producing a transistor using anodic oxidation Method for producing a transistor using anodic oxidation

1995-05-31

1998-05-05

Niebling, John

Fishing, trapping, and vermin destroying

437983, 205124, H01L 21786

Patent

active

057473552

ABSTRACT:
A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.

REFERENCES:
patent: 3806778 (1974-04-01), Shimakura
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5561075 (1996-10-01), Nakazawa
patent: 5568288 (1996-10-01), Yamazaki

Affiliated with

Also associated with

Rating

Method for producing a transistor using anodic oxidation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing a transistor using anodic oxidation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing a transistor using anodic oxidation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-53666