Fishing – trapping – and vermin destroying
Patent
1991-11-25
1993-04-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 34, 437 40, 437 41, 257344, 257900, H01L 21265
Patent
active
052003523
ABSTRACT:
A transistor (10 or 11) and method of formation. The transistor (10) has a substrate (12). The substrate (12) has an overlying dielectric layer (14) and an insulated conductive control electrode (16) which overlies the dielectric layer (14). A dielectric region (18) overlies the insulated conductive control electrode (16), and a dielectric region (20) is adjacent to the insulated conductive control electrode (16). A spacer (30) is adjacent to the dielectric region (20). Epitaxial regions (24) are adjacent to the spacer (30) and the spacer (30) is overlying portions of the epitaxial regions (24). A dielectric region (26) overlies the epitaxial regions (24). Highly doped source and drain regions (32) underlie the epitaxial regions (24). LDD regions (28), which are underlying the spacer (30), are adjacent to and electrically connected to the source and drain regions (32).
REFERENCES:
patent: 4886765 (1989-12-01), Chen et al.
patent: 4931408 (1990-06-01), Hshieh
patent: 4998150 (1991-03-01), Rodder et al.
patent: 5079180 (1992-01-01), Rodder et al.
patent: 5082794 (1992-01-01), Pfiester et al.
Hearn Brian E.
King Robert L.
Motorola Inc.
Picardat Kevin M.
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