Group II-VI semiconductor laser and method for the manufacture t

Details Group II-VI semiconductor laser and method for the manufacture t Group II-VI semiconductor laser and method for the manufacture t

1995-02-22

1997-04-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117103, 117108, 438 47, C30B 2514

Patent

active

056161778

ABSTRACT:
In a Group II-VI semiconductor laser based on MgZnSSe, CdZnSSe, and MgCdZnSSe, adsorption layers containing crystal structure elements and doping impurities are successively grown as crystals on an n-type substrate, wherein the layers from the initial adsorption layer to the next-to-last p-type adsorption layer are formed using solid-source MBE, and the last p-type adsorption layer is formed using gas-source MBE or MOVPE; and wherein the last p-type adsorption layer is preferably grown under Group II rich conditions.

REFERENCES:
patent: 5068204 (1991-11-01), Kukimoto
patent: 5299217 (1994-03-01), Migita et al.
patent: 5351255 (1994-09-01), Schetzina
patent: 5366927 (1994-11-01), Schetzina
N. Nakayama, S. Itoh, T. Ohata, K, Nakano, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda, and Y. Mori, "Room Temperature Continuous Operation of Blue-Green Laser Diodes", Electronic Letters, vol. 29, No. 16, 5th Aug., 1993.
Bhargava, R. N., "Compact Blue Lasers in the Near Future", Journal of Crystal Growth, vol. 117, No. 1/4, Feb. 1992, pp. 894-901.
Kobayashi, Masakazu, et al., "The MBE Growth of Widegap II-VI Injections Lasers and LEDs", Optoelectronics Devices and Technologies, vol. 7, No. 1, Jun. 1992, pp. 1-10.
Ichino, Kunio, et al., "Metalorganic Molecular Beam Epitaxy of Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y Quaternary Alloys on GaAs Substrate", Japanese Journal of Applied Physics, vol. 30, No. (B, Sep., 1991, pp. L1624-L1626.
Tamargo, M.C. et al., "MBE Growth of the (Zn,Cd)(Se,Te) System for Wide-Bandgap Heterostructure Lasers", Semiconductor Science and Technology, vol. 6, No. 9A, Bristol, GB, pp. A8-A13.

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