Process for simultaneously fabricating epitaxial resistors, base

Details Process for simultaneously fabricating epitaxial resistors, base Process for simultaneously fabricating epitaxial resistors, base

1975-08-11

1977-05-24

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 148187, H01L 21265

Patent

active

040253643

ABSTRACT:
A process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases in a semiconductor substrate utilizes the stopping power of different layers of materials to determine the location of impurity concentrations induced by ion implantation.

REFERENCES:
patent: 3383567 (1968-05-01), King et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 3756861 (1973-09-01), Payne et al.
patent: 3756862 (1973-09-01), Ahn et al.
patent: 3775192 (1973-11-01), Beale

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