Susceptor for vapor-growth deposition

Details Susceptor for vapor-growth deposition Susceptor for vapor-growth deposition

1991-03-14

1993-04-06

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422245, 156610, 156613, 156614, 156DIG64, 123345, 118728, C30B 2512

Patent

active

052001571

ABSTRACT:
The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.

REFERENCES:
patent: 3205043 (1965-09-01), Taylor
patent: 3382113 (1968-05-01), Ebert et al.
patent: 3463666 (1969-08-01), Kern et al.
patent: 3520740 (1970-07-01), Addamiano
patent: 4623425 (1986-11-01), Suzuki et al.
patent: 4624735 (1986-11-01), Kayana et al.
Minagwa et al, "Epitaxial Growth of .alpha.-SiC from the Vapor Phase" Japanese Journal of Applied Physics, vol. 10, No. 12 (Dec. 1971) pp. 1680-1690.

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