Semiconductor laser device having a graded index waveguide

Details Semiconductor laser device having a graded index waveguide Semiconductor laser device having a graded index waveguide

1986-10-17

1989-06-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, H01S 319

Patent

active

048415332

ABSTRACT:
A semiconductor laser device containing a laser oscillation-operating area comprising a superlatticed quantum well region which is composed of layers of GaAs alternating with layers of Al.sub.x Ga.sub.1-x As (0<x.ltoreq.1), where each of the layers has a thickness of several molecular layers or less;

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patent: 4616241 (1986-10-01), Biefeld et al.
Tsang, Extremely Low Threshold (AIGa) As Modified . . . Bell Labs, New Jersey, 1981.
Iwamura et al., Musashino Electrical Comm. Lab., Nippon Telegraph & Telephone Co., 6th Jan. 1983.
Matsumoto et al., Japanese Journal of Applied Physics vol. 16, No. 8, 1977.
Oomura et al., IEEE Journal of Quantum Electronics, vol. QE-20, No. 8, 1944.
Dutta, Calculated Threshold Current of GaAs Quantum Well Lasers, Bell Labs, New Jersey, 1982.
Higuchi et al., LSI Research & Development Laboratory Mitsubishi Electric Corp., Leakage Current in p-Substrate 1984.
Hirano et al., Applied Physics, Lett., vol. 43, No. 2, 187-189, 1983.
T. Hayakawa, T. Suyama, K. Takahashi et al. "Low current threshold AlGaAs visible laser diodes with an (AIGaAs).sub.m (GaAs).sub.n superlattice quantum well." Appl. Phys. Lett., 49 (11), 1986.

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