Modified conductivity modulated MOSFET

Details Modified conductivity modulated MOSFET Modified conductivity modulated MOSFET

1986-08-26

1989-06-20

James, Andrew J.

357 231, 357 238, 357 38, 357 43, 357 86, H01L 2978, H01L 2974, H01L 2702

Patent

active

048413453

ABSTRACT:
A planar vertical diffusion self aligned conductivity modulated MOSFET comprising a semiconductor island region (70) of a first conductivity type having a high impurity concentration and formed in an island shape in a predetermined region on the surface on the side of a electrode (8) of a semiconductor substrate layer (10) of a second conductivity type having a high impurity concentration.

REFERENCES:
patent: 3227896 (1966-01-01), Teszner
patent: 4236169 (1980-11-01), Nakashima et al.
patent: 4561008 (1985-12-01), Becke
A. Goodman, J. Russell, L. Goodman, C. Nuese, and J. Neilson, "Improved COMFETs with Fast Switching Speed and High-Current Capability", IDEM Tech. Digest. 1983, pp. 79-83.

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